公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2023 | Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation | Tsai, Tsung Yin; Qwah, Kai Shek; Banon, Jean Philippe; Filoche, Marcel; Weisbuch, Claude; YUH-RENN WU ; Speck, James S. | Physical Review Applied | | 0 | |
2015 | Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy | Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 47 | 38 | |
2014 | High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy | Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Wu, Yuh-Renn; Speck, James S.; YUH-RENN WU | Journal of Applied Physics | 93 | 90 | |
2023 | Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy | Tak, Tanay; Johnson, Cameron W.; Ho, Wan Ying; Wu, Feng; Sauty, Mylène; Rebollo, Steve; Schmid, Andreas K.; Peretti, Jacques; YUH-RENN WU ; Weisbuch, Claude; Speck, James S. | Physical Review Applied | | | |
2023 | Origins of the high-energy electroluminescence peaks in long-wavelength (∼495-685 nm) InGaN light-emitting diodes | Chow, Yi Chao; Tak, Tanay; Wu, Feng; Ewing, Jacob; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU ; Weisbuch, Claude; Speck, James S. | Applied Physics Letters | 2 | | |
2014 | The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior | Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 128 | 120 | |
2014 | Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices | Zhao, Yuji; Farrell, Robert M.; YUH-RENN WU ; Speck, James S. | Japanese Journal of Applied Physics | 38 | 31 | |