公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2023 | Origins of the high-energy electroluminescence peaks in long-wavelength (∼495-685 nm) InGaN light-emitting diodes | Chow, Yi Chao; Tak, Tanay; Wu, Feng; Ewing, Jacob; Nakamura, Shuji; DenBaars, Steven P.; YUH-RENN WU ; Weisbuch, Claude; Speck, James S. | Applied Physics Letters | 2 | | |
2014 | The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior | Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; Wu, Yuh-Renn; YUH-RENN WU | Journal of Applied Physics | 128 | 120 | |
2014 | Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices | Zhao, Yuji; Farrell, Robert M.; YUH-RENN WU ; Speck, James S. | Japanese Journal of Applied Physics | 38 | 31 | |