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  1. NTU Scholars
  2. Research Outputs

Browsing by Author Sturm, J.C.


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Showing results 11 to 30 of 41 < previous   next >
Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
2008Fracture mechanisms of sink thin-films on compliant substratesKattamis, A.Z.; Cherenack, K.H.; Cheng, I.C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG Materials Research Society Symposium
1994Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor depositionLiu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU Applied Physics Letters 2725
1996Growth and photoluminescence of high quality SiGeC random alloys on silicon substratesLiu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU Journal of Applied Physics 
1994Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor depositionLiu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU Materials Research Society Symposium
1997Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor depositionLiu, C.W.; Sturm, J.C.; CHEE-WEE LIU Materials Research Society Symposium
2012High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregationHuang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 201200
1996High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniquesMadhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU Annual Device Research Conference Digest 
2006High mobility nanocrystalline silicon transistors on clear plastic substratesKattamis, A.Z.; Holmes, R.J.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Forrest, S.R.; Wagner, S.; I-CHUN CHENG IEEE Electron Device Letters 3530
2005High-temperature (250°C) amorphous-silicon TFT's on clear plastic substratesLong, K.; Kattamis, A.; Cheng, I.-C.; Gao, Y.X.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG SID International Symposium 50
2013Implant isolation of silicon two-dimensional electron gases at 4.2 KHuang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI IEEE Electron Device Letters 12
2005Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperaturesLong, K.; Kattamis, A.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG Device Research Conference10
1997Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristicsLiu, C.W.; Sturm, J.C.; CHEE-WEE LIU Journal of Applied Physics 
2005Managing mechanical stress in flexible active-matrix backplanesWagner, S.; Cheng, I.-C.; Long, K.; Kattamis, A.; Sturm, J.C.; I-CHUN CHENG International Display Manufacturing Conference and Exhibition, IDMC'05 
2005Mechanics of TFT Technology on Flexible SubstratesWagner, S.; Gleskova, H.; Cheng, I.-C.; Sturm, J.C.; Suo, Z.; I-CHUN CHENG Flexible Flat Panel Displays 580
2006Mechanics of thin-film transistors and solar cells on flexible substratesGleskova, H.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; Suo, Z.; I-CHUN CHENG Solar Energy 129119
2005Nanocrystalline silicon thin film transistors on optically clear polymer foil substratesKattamis, A.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG Materials Research Society Symposium Proceedings 
1993Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor depositionSturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU Materials Science and Engineering B 00
1992Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wellsXiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU Applied Physics Letters 5254
1992Quantum confinement effects in strained silicon-germanium alloy quantum wellsXiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU Applied Physics Letters 6369
2008Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plasticHekmatshoar, B.; Kattamis, A.Z.; Cherenack, K.H.; Long, K.; Chen, J.-Z.; Wagner, S.; Sturm, J.C.; Rajan, K.; Hack, M.; JIAN-ZHANG CHEN IEEE Electron Device Letters3529
Showing results 11 to 30 of 41 < previous   next >

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

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開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

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