| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2012 | High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
| 1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | | | |
| 2006 | High mobility nanocrystalline silicon transistors on clear plastic substrates | Kattamis, A.Z.; Holmes, R.J.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Forrest, S.R.; Wagner, S.; I-CHUN CHENG | IEEE Electron Device Letters | 35 | 30 | |
| 2005 | High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates | Long, K.; Kattamis, A.; Cheng, I.-C.; Gao, Y.X.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | SID International Symposium | 5 | 0 | |
| 2013 | Implant isolation of silicon two-dimensional electron gases at 4.2 K | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Electron Device Letters | 1 | 2 | |
| 2005 | Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures | Long, K.; Kattamis, A.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | Device Research Conference | 1 | 0 | |
| 1997 | Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics | Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Journal of Applied Physics | | | |
| 2005 | Managing mechanical stress in flexible active-matrix backplanes | Wagner, S.; Cheng, I.-C.; Long, K.; Kattamis, A.; Sturm, J.C.; I-CHUN CHENG | International Display Manufacturing Conference and Exhibition, IDMC'05 | | | |
| 2005 | Mechanics of TFT Technology on Flexible Substrates | Wagner, S.; Gleskova, H.; Cheng, I.-C.; Sturm, J.C.; Suo, Z.; I-CHUN CHENG | Flexible Flat Panel Displays | 58 | 0 | |
| 2006 | Mechanics of thin-film transistors and solar cells on flexible substrates | Gleskova, H.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; Suo, Z.; I-CHUN CHENG | Solar Energy | 129 | 119 | |
| 2005 | Nanocrystalline silicon thin film transistors on optically clear polymer foil substrates | Kattamis, A.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | Materials Research Society Symposium Proceedings | | | |
| 1993 | Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition | Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Science and Engineering B | 0 | 0 | |
| 1992 | Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells | Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | 52 | 54 | |
| 1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | 63 | 69 | |
| 2008 | Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic | Hekmatshoar, B.; Kattamis, A.Z.; Cherenack, K.H.; Long, K.; Chen, J.-Z.; Wagner, S.; Sturm, J.C.; Rajan, K.; Hack, M.; JIAN-ZHANG CHEN | IEEE Electron Device Letters | 35 | 29 | |
| 2006 | Self-aligned amorphous-silicon TFTs on clear plastic substrates | Cheng, I.-C.; Kattamis, A.Z.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | IEEE Electron Device Letters | 22 | 15 | |
| 1993 | Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition | Schwartz, P.V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | 3 | 5 | |
| 1996 | Si/Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> /Si heterojunction bipolar transistors | Lanzerotti, L.D.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Watanabe, J.K.; Theodore, N.D.; CHEE-WEE LIU | IEEE Electron Device Letters | 69 | 55 | |
| 2006 | SiNx barrier layers deposited at 250°C on a clear polymer substrate | Cherenack, K.; Kattamis, A.; Long, K.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | Materials Research Society Symposium | | | |
| 2006 | Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C | Long, K.; Kattamis, A.Z.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | IEEE Electron Device Letters | 94 | 82 | |
