| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1993 | Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition | Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Science and Engineering B | 0 | 0 | |
| 1992 | Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells | Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | 52 | 54 | |
| 1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | 63 | 69 | |
| 2008 | Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic | Hekmatshoar, B.; Kattamis, A.Z.; Cherenack, K.H.; Long, K.; Chen, J.-Z.; Wagner, S.; Sturm, J.C.; Rajan, K.; Hack, M.; JIAN-ZHANG CHEN | IEEE Electron Device Letters | 35 | 29 | |
| 2006 | Self-aligned amorphous-silicon TFTs on clear plastic substrates | Cheng, I.-C.; Kattamis, A.Z.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | IEEE Electron Device Letters | 22 | 15 | |
| 1993 | Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition | Schwartz, P.V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | 3 | 5 | |
| 1996 | Si/Si <inf>1-x-y</inf> Ge <inf>x</inf> C <inf>y</inf> /Si heterojunction bipolar transistors | Lanzerotti, L.D.; St. Amour, A.; Liu, C.W.; Sturm, J.C.; Watanabe, J.K.; Theodore, N.D.; CHEE-WEE LIU | IEEE Electron Device Letters | 69 | 55 | |
| 2006 | SiNx barrier layers deposited at 250°C on a clear polymer substrate | Cherenack, K.; Kattamis, A.; Long, K.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | Materials Research Society Symposium | | | |
| 2006 | Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C | Long, K.; Kattamis, A.Z.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG | IEEE Electron Device Letters | 94 | 82 | |
| 2005 | Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates | Cheng, I.-C.; Kattamis, A.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG | Journal of the Society for Information Display | 54 | 42 | |
| 1997 | Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices | Wu, C.C.; Wu, C.I.; Sturm, J.C.; Kahn, A.; CHIH-I WU | Applied Physics Letters | | | |
| 1993 | Symmetric Si/Si<inf>1-x</inf>Ge<inf>x</inf> electron resonant tunneling diodes with an anomalous temperature behavior | Matutinovi?-Krstelj, ?.; Liu, C.W.; Xiao, X.; Sturm, J.C.; CHEE-WEE LIU | Applied Physics Letters | 18 | 0 | |
| 2013 | The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Transactions on Electron Devices | 7 | 7 | |
| 2012 | The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 5 | 6 | |
| 2013 | Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
