| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2013 | The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases | Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | IEEE Transactions on Electron Devices | 7 | 7 | |
| 2012 | The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7Ge 0.3 films by rapid thermal chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 5 | 6 | |
| 2013 | Very low electron density in undoped enhancement-mode Si/SiGe two-dimensional electron gases with thin sige cap layers | Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 |
