公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
- | Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy | Talwar, Devki N.; Lin, Hao-Hsiung; Feng, Zhe Chuan; HAO-HSIUNG LIN | Journal of Raman Spectroscopy | |||
2004 | Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation | Talwar, Devki N.; Feng, Z. C. | Computational Materials Science |