公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2022 | In-situ deposited HfO2and Y2O3on epi-Si/ p-Ge-a comparative study of the interfacial properties and reliability | Chu T.-Y; Wan H.-W; Cheng Y.-T; CHIA-KUEN CHENG ; Hong Y.-J; Kwo J; Hong M. | Japanese Journal of Applied Physics | 3 | 2 | |
2021 | Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics-Attainment of Low Interfacial Traps and Highly Reliable Ge MOS | Wan H.-W; Hong Y.-J; Cheng Y.-T; CHIA-KUEN CHENG ; Hsu C.-H; Wu C.-T; Pi T.-W; Kwo J; Hong M. | ACS Applied Electronic Materials | 7 | 7 |