公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2001 | A New Wide-band gap Semiconductor: SixCyNz | L. C. Chen ; K. H. Chen; D. M. Bhusari; Y. F. Chen; Y. S. Huang | ||||
2009 | Nitrogen atomic rearrangement in thermally annealed GaAsSbN | Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN | OPT2009 | |||
2005 | Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells | H. P. Hsu; Y. S. Huang; P.W. Liu; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | OPT2005 | |||
2009 | Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures | P. Sitarek; H. P. Hsu; Y. S. Huang; J. M. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Journal of Applied Physics. | 8 | ||
2010 | Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy | H. P. Hsu; Y. S. Huang; Y. T. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Materials Chemistry and Physics | 7 | ||
2007 | Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells | H. P. Hsu; P. Sitarek; Y. S. Huang; P. W. Liu; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | physica status solidi (a) | 2 | ||
2013 | Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure | J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; H. S. Tsai; HAO-HSIUNG LIN | Journal of Luminescence | |||
2009 | Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, | H. P. Hsu; Y. N. Huang; Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; K. K. Tiong; P. Sitarek; J. Misiewicz; HAO-HSIUNG LIN | Physica Status Solidi (A) Applications and Materials Science | 0 | ||
2016 | Role of the RAD51-SWI5-SFR1 Ensemble in homologous recombination | G. C. Su; H. Y. Yeh; S. W. Lin; C. I. Chung; Y. S. Huang; Y. C. Liu; P. C. Lyu; P. Chi | Nucleic Acids Research | 11 | 9 | |
2015 | Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques | H. P. Hsu; J. D. Wu; Y. J. Lin; Y. S. Huang; Y. R. Lin; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 1 | 1 | |
2013 | Temperature dependence of quantized states in an In<inf>0.86</inf>Ga<inf>0.14</inf>As<inf>0.3</inf>p<inf>0.7</inf>/Inp quantum well heterostructure | C. F. Li; D. Y. Lin; Y. S. Huang; K. K. Tiong; YANG-FANG CHEN | Journal of Applied Physics | |||
2014 | Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy | H. P. Hsu; P. H. Wu; J. Y. Chen; B. H. Chen; Y. S. Huang; Y. C. Chin; K. K. Tiong; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 0 | 0 | |
2005 | The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well | G. L. Wang; Y. S. Huang; H. H. Lin; C. H. Chan; HAO-HSIUNG LIN | OPT 2005 |