公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2012 | Defects probing by temperature dependence Raman scattering of GaAsSbN | J. Wu; Y. T. Lin; HAO-HSIUNG LIN | IEDMS 2012, international electron devices and materials symposium | |||
2007 | Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2008 | Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy | H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN | MBE Taiwan 2008 | |||
2008 | Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN | S. P. Wang; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | |||
2010 | Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN | Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN | Applied Physics Letters | 12 | ||
2007 | Effect of thermal annealing on the optical properties of GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2009 | Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN | S. P. Wang; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | International Journal of Electrical Engineering | |||
2010 | Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2011 | Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | |||
2010 | Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 16th international conference on crystal growth (ICCG-16) | |||
2006 | Effects of thermal annealing on the energy gap of GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2008 | Energy gap reduction in GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | Applied Physics Letters | 44 | ||
2012 | Evidence of nitrogen reorganization in GaAsSbN alloys | H. P. Hsu; Y. T. Lin; HAO-HSIUNG LIN | Japanese Journal of Applied Physics. | 7 | ||
2018 | Fast and accurate yield rate prediction of PCB embedded common-mode filter with artificial neural network | Y. T. Lin; C. H. Cheng; T. L. Wu; TZONG-LIN WU | IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (EMC/APEMC) | 5 | 0 | |
2006 | GaAsSbN grown on GaAs by gas source molecular beam epitaxy | T. C. Ma; T. Y. Chen; S. K. Chang; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2008 | GaAsSbN/GaAs long wavelength PIN detectors | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | |||
2010 | Hetero-epitaxy of InAs on patterened Si (100) substrates | Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; HAO-HSIUNG LIN | 2010 international electron devices and materials symposia | |||
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | |||
2007 | InAsPSb quaternary alloy grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | 10 | 9 | |
2006 | InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop |