公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | P-type doping in GaN through Be implantation | CHIH-CHUNG YANG ; Feng, Z.C.; Sun, Y.J.; Tan, L.S.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG | Physica Status Solidi C: Conferences | | | |
1998 | Photoluminescence and Raman Scattering characterization of GaN, InGaN and AlGaN films using a UV Excitation Raman-Photoluminescence microscope | Feng, Z.C.; Schurman, M.; Tran, C.; Salagaj, T.; Karlicek, B.; Ferguson, I.; Stall, R.A.; Dyer, C.D.; Williams, K.P.J.; Pitt, G.D. | Materials Science Forum | | | |
2006 | Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition | Feng, Z.C.; Liu, W.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Yang, T.R.; Zhao, J. | Thin Solid Films | | | |
2006 | Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition | Feng, Z.C.; Liu, W.; Chua, S.J.; Yu, J.W.; CHIH-CHUNG YANG ; Yang, T.R.; Zhao, J. | Thin Solid Films | 13 | 12 | |
1988 | A photoluminescence comparison of CdTe thin films grown by molecular beam epitaxy, metalorganic chemical vapor and UHV sputtered depositions | Feng, Z.C.; Bevan, M.J.; Choyke &, W.J.; Krishnaswamy, S.V. | J. Appl. Phys | | | |
2007 | Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition | Lee, Z.S.; Feng, Z.C.; Li, A.G.; Tsai, H.L.; Yang, J.R.; Chen, Y.F.; Li, N.; Ferguson, I.T.; JER-REN YANG ; YANG-FANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
1989 | Photoluminescence of Cd1-xMnxTe films grown by metalorganic chemical vapor deposition | Feng, Z.C.; Perkowitz, S.; Sudharsanan, R.; Erbil, A.; Pollard, K.T.; Rohatgi, A.; Bradshaw &, J.; Choyke, W.J. | J. Appl. Phys | | | |
1985 | A photoluminescence study of molecular beam epitaxy grown CdTe films on (001) InSb substrates | Feng, Z.C.; Mascarenhas, A.; Choyke, W.J.; Farrow, R.F.C.; Shirland, F.A.; Takei, W.J. | Appl. Phys. Lett | | | |
1995 | Photoluminescence, Raman and infrared diagnostics of GaAs-AlGaAs superlattices for intersubband infrared detection | Feng, Z.C.; Perkowitz, S.; Cen, J.; Bajaj, K.K.; Kinell &, D.K.; Whitney, R.L. | IEEE J. Selected Topics in Quantum Electronics | | | |
1995 | Physical characterization of Pb1Zr0.2Ti0.8O3 prepared by the sol-gel process | Bozack, M.J.; Williams, J.R.; Ferraro, J.M.; Feng, Z.C.; Jones, R.E. | J. Electrochem. Soc | | | |
2012 | Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects | Hsu, H.-C.; Hsu, G.-M.; Lai, Y.-S.; Feng, Z.C.; Tseng, S.-Y.; Lundskog, A.; Forsberg, U.; Janzén, E.; Chen, K.-H.; Chen, L.-C. | Applied Physics Letters | 16 | 14 | |
2006 | Pulse source injection molecular beam epitaxy and characterization of nano-scale thin GaN layers on Si substrates | Tong, W.; Harris, M.; Wagner, B.K.; Yu, J.W.; Lin, H.C.; Feng, Z.C. | Surface and Coatings Technology | | | |
1990 | Raman and resonant Raman scattering for the HgTe/CdTe superlattice | Feng, Z.C.; Perkowitz &, S.; Wu, O.K. | Phys. Rev. B,B41 | | | |
1995 | Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition | Feng, Z.C.; Tin, C.C.; Hu, R.; Williams, J. | Thin Solid Films | 37 | 40 | |
1988 | Raman determination of layer stresses and strains for heterostructures and its application to the cubic 3C-SiC/Si system | Feng, Z.C.; Choyke, W.J.; Powell, J.A. | J. Appl. Phys | | | |
1996 | Raman microprobe spectroscopy of low-pressure-grown 4H-SiC epilayers | Tin, C.C.; Hu, R.; Liu, J.; Vohra, Y.; Feng, Z.C. | J. Crystal Growth | | | |
2011 | Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy | Chung, Y.L.; Peng, X.; Liao, Y.C.; Yao, S.; Chen, L.C. ; Chen, K.H.; Feng, Z.C. | Thin Solid Films | 5 | 4 | |
2012 | Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si | Feng, Z.C.; Chen, C.; Xu, Q.; Mendis, S.P.; Jang, L.-Y.; Tin, C.-C.; Lee, K.-Y.; Liu, C.W.; Wu, Z.; KUNG-YEN LEE ; CHEE-WEE LIU | Materials Science Forum | 1 | 0 | |
1994 | Raman scattering and X-ray diffraction of highly-textured (Pb1-xLax)TiO3 thin films | Feng, Z.C.; Kwak, B.S.; Erbil &, A.; Boatner, L.A. | Appl. Phys. Lett | | | |
1997 | Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metalorganic chemical vapor deposition | Feng, Z.C.; Schurman, M.; Stall, R.A.; Pavloski &, M.; Whitley, A. | Appl. Optics | | | |