公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
1987 | Raman detection of the superconducting gap in Ba-Y-Cu-O superconductors | Lyons, KB; Liou, Sy\\_Hwang; Hong, M; Chen, HS; Kwo, J; Negran, TJ; MINGHWEI HONG | Physical Review B | | | |
2000 | RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100) | Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | | | |
2003 | Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor | Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
1985 | Reactive diffusion and superconductivity of Nb3Al multilayer films | V; enberg, JM; Hong, M; Hamm, RA; Gurvitch, M; MINGHWEI HONG | Journal of applied physics | | | |
2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
1996 | Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG | Applied Physics Letters | 60 | 63 | |
1995 | RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH | Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG | Compound Semiconductors 1994 | | | |
1991 | Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates | Wang, YH; Tai, K; Hsieh, YF; Chu, SNG; Wynn, JD; Hong, M; Fischer, RJ; Cho, AY; MINGHWEI HONG | Journal of Crystal Growth | | | |
1993 | Relative intensity noise of vertical cavity surface emitting lasers | Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J; Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
1993 | Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching | Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Research advances on III-V MOSFET electronics beyond Si CMOS | Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
1980 | Research on the Monolithic Process of Making A15 Superconducting Materials | Hong, M; Dietderich, D; Morris Jr, JW; MINGHWEI HONG | Advances in Cryogenic Engineering Materials | | | |
1989 | Rf-diode sputtered amorphous rare earth-transition metal films: Microstructure, stability, and magneto-optical properties | Shieh, H-PD; Hong, M; Nakahara, S; MINGHWEI HONG | Thin Solid Films | | | |
2012 | Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films | Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | Room temperature ferromagnetism in cluster free, Co doped Y2 O 3 dilute magnetic oxide | Wu, CN; Huang, SY; Lin, WC; Wu, TS; Soo, YL; Lee, WC; Lee, YJ; Chang, YH; Hong, M; Kwo, J | APS Meeting Abstracts | | | |
1988 | Scanning electron microscope identification of weak links in superconducting thin films | Monroe, Don; Brocklesby, WS; Farrow, RC; Hong, M; Liou, Sy\\_Hwang; MINGHWEI HONG | Applied Physics Letters | | | |
2003 | Schottky barrier height and interfacial state density on oxide-GaAs interface | Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG | Journal of applied physics | 18 | 16 | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |