公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation | MINGHWEI HONG ; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM | Science | | | |
2004 | Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Wu, SY | MRS Proceedings | | | |
2001 | GaAs MOSFET-Materials Physics and Devices | MINGHWEI HONG ; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS | APPC 2000 | | | |
2002 | GaN/Gd2O3/GaN Single Crystal Heterostructure | MINGHWEI HONG ; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI | State-of-the-Art Program on Compound Semiconductors XXXVI, and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II | | | |
2001 | HCP single crystal rare earth oxides on GaN | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JI | APS Meeting Abstracts | | | |
2000 | High E gate dielectrics Gd2O3 and Y2O3 for silicon | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KT; Chabal, YJ; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM | Applied Physics Letters | | | |
1988 | High T c superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; MINGHWEI HONG ; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others | Thin Film Processing and Characterization of High-Temperature Superconductors | | | |
1988 | High T/sub c/superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; MINGHWEI HONG ; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others | AIP Conference Proceedings | | | |
2008 | High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics | Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; MINGHWEI HONG ; Kwo, J; Hsu, C-H | Journal of Vacuum Science & Technology B | | | |
2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | MINGHWEI HONG ; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others | Applied Physics Letters | | | |
2005 | High-quality thin single-crystal $γ$-Al2O3 films grown on Si (111) | Wu, SY; MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, WC; Huang, YL | Applied Physics Letters | | | |
1988 | In situ epitaxial growth of Y 1 Ba 2 Cu 3 O/sub 7-//sub x/films by molecular beam epitaxy with an activated oxygen source | Kwo, J; MINGHWEI HONG ; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT | | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; MINGHWEI HONG ; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT | Physica C: Superconductivity | | | |
1989 | In-situ growth of Y 1 Ba 2 Cu 3 O 7-x films by molecular beam epitay with an activated oxygen source | Kwo, J; MINGHWEI HONG ; Trevor, DJ; Fleming, RM; White, AE; Mannaerts, JP; Farrow, RC; Kortan, AR; Short, KT | International conference on materials and mechanisms of superconductivity | | | |
2000 | Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states | MINGHWEI HONG ; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY | Applied Physics Letters | | | |
1988 | Insitu epitaxial growth of Y1Ba2Cu3O7- x films by molecular beam epitaxy with an activated oxygen source | Kwo, J; MINGHWEI HONG ; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT | Applied Physics Letters | | | |
2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | MINGHWEI HONG ; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | MRS Proceedings | | | |
1991 | MBE growth and properties of Fe 3 (Al, Si) on GaAs (100) | MINGHWEI HONG ; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC | Journal of Crystal Growth | | | |
2008 | Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; MINGHWEI HONG ; Kwo, J; Hsu, CH | Applied Physics Letters | | | |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others | APS Meeting Abstracts | | | |