公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2002 | DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG | 24th Annual Gallium Arsenide Integrated Circuit Symposium, 2002 | | | |
2010 | dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2010 | DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG | Jorurnal Vacuum Science and Technology B | | | |
2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG | Surface Science | | | |
2007 | Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering | Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG | Thin solid films | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG | Device Research Conference Digest 1997 | | | |
2015 | Demonstration of large field effect in topological insulator films via a high-kappa back gate | Wang, CY; Lin, HY; Lin, YH; Chen, KH; Yang, BY; Chen, KHM; Peng, ZJ; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | APS March Meeting Abstracts | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
1998 | Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide | Hong, M; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1998 | Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Y; Hong, M; Kuo, J; Mannaerts, J; Kwo, J; Tsai, H; Krajewski, J; Chen, Y; Cho, A; MINGHWEI HONG | IEEE International Electron Devices Meeting | 11 | | |
2007 | Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric | Tsai, PJ; Chu, LK; Chen, YW; Chiu, YN; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2004 | Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG | Applied Physics Letters | 143 | 131 | |
2005 | Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si | Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG | 真空科技 | | | |
2005 | Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2005 | Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy | Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Journal of Crystal Growth | | | |
2013 | Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt | Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2016 | Detection of topological surface states by spin pumping at room temperature | Fanchiang, YT; Cheng, CK; Hong, M; Lin, HY; Chen, KH; Yang, SR; Wu, CN; Kwo, J; Lee, SF; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
1989 | Diffraction studies of rare earth metals and superlattices | Bohr, J; Gibbs, Doon; Axe, JD; Moncton, DE; d'Amico, KL; Majkrzak, CF; Kwo, J; Hong, M; Chien, CL; Jensen, J; MINGHWEI HONG | Physica B: Condensed Matter | | | |