公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Solid-State Electronics | 27 | 26 | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
2008 | Electrical manipulation of magnetic anisotropy in the composite of liquid crystals and ferromagnetic nanorods | Lin, T.-J.; Chen, Y.-F.; Chen, C.-C.; Lee, W.C.; Cheng, S.Lin, T.-J.; Chen, C.-C.; Lee, W.; Cheng, S.; Chen, Y.-F.; SOO-FIN CHENG ; YANG-FANG CHEN | Applied Physics Letters | 18 | 16 | |
2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
2011 | Epitaxial stabilization of a monoclinic phase in Y<inf>2</inf>O<inf>3</inf> films on c-plane GaN | Chang, W.H.; Chang, P.; Lee, W.C.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 20 | 20 | |
2007 | An experimental study on non-audit service and auditor decisions: Pre- and post-Procomp scandal | Duh, R.R.; Lee, W.C.; Lin, C.C.; RONG-RUEY DUH | Taiwan Accounting Review | 0 | 0 | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG | Journal of Applied Physics | 3 | 4 | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG | Journal of Applied Physics | 3 | 4 | |
2013 | Ferromagnetism in cluster free, transition metal doped high 庥 dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 4 | |
2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Crystal Growth | 8 | 6 | |
2009 | GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy | Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 12 | |
2014 | Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) | Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 14 | 13 | |
2008 | Growth and structural characteristics of GaN/AIN/nanothick 帠-Al <inf>2</inf>O<inf>3</inf>/Si(111) | Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 7 | 7 | |
2008 | High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics | Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 13 | 14 | |
2005 | High-quality thin single-crystal 帠-Al <inf>2</inf> O <inf>3</inf> films grown on Si (111) | Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG | Applied Physics Letters | 46 | 38 | |
2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
2008 | Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics | You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 8 | 10 | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 9 | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |