公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | IEEE Electron Device Letters | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. | Electron Devices Meeting, 2002. IEDM '02. Digest. International | 0 | 0 | |
1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | CHEE-WEE LIU ; Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | | | |
2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | Pei, Zingway; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | |
2006 | Hole confinement at Si/SiGe heterojunction
of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2006 | Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices | Wei, J.-Y.; Maikap, S.; Lee, M.H.; Lee, C.C.; Liu, C.W. | Solid-State Electronics | | | |
2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | CHEE-WEE LIU ; Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | | | |
2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | | | |
2011 | Influence of defects and interface on radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | | | |
2012 | Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers | CHEE-WEE LIU ; Talwar, D.N.; Feng, Z.C.; Liu, C.W.; Tin, C.-C.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2020 | Infrared Response of Stacked GeSn Transistors | CHEE-WEE LIU ; Liu, H.-H.; Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | | | |
2010 | Insulating halos to boost planar NMOSFET performance | CHEE-WEE LIU ; Hsu, W.-W.; Lai, C.-Y.; Liu, C.W.; Ko, C.-H.; Kuan, T.-M.; Wang, T.-J.; Lee, W.-C.; Wann, C.H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2003 | Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity | CHEE-WEE LIU ; Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | | | |
2013 | Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness | CHEE-WEE LIU ; Lin, C.-M.; Chang, H.-C.; Wong, I.-H.; Luo, S.-J.; Liu, C.W.; Hu, C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2015 | Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry | CHEE-WEE LIU ; Xie, D.; Qiu, Z.R.; Talwar, D.N.; Liu, Y.; Song, J.-H.; Huang, J.-L.; Mei, T.; Liu, C.W.; Feng, Z.C.; CHEE-WEE LIU | International Journal of Nanotechnology | | | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; LiuCW | Electron Devices Meeting, 1999. IEDM | 0 | 0 | |
1999 | Light emission and detection by metal oxide silicon tunneling diodes | Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; CHING-FUH LIN | International Electron Devices Meeting, IEDM | | | |
1997 | Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics | CHEE-WEE LIU ; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2020 | Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells | CHEE-WEE LIU ; Shashkin, A.A.; Melnikov, M.Y.; Dolgopolov, V.T.; Radonji?, M.M.; Dobrosavljevi?, V.; Huang, S.-H.; Liu, C.W.; Zhu, A.Y.X.; Kravchenko, S.V.; CHEE-WEE LIU | Physical Review B | | | |