公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation | Chen, Y.-Y.; Chen, J.Y.; Hsu, R.-J.; Ho, W.S.; Liu, C.W.; Tsai, W.-F.; Ai, C.-F.; CHEE-WEE LIU | Journal of the Electrochemical Society | 2 | 2 | |
2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | 0 | 0 | |
2014 | Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells | Melnikov, M.Y.; Shashkin, A.A.; Dolgopolov, V.T.; Kravchenko, S.V.; Huang, S.-H.; Liu, C.W.; CHEE-WEE LIU | JETP Letters | 14 | 13 | |
2019 | Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride | Huang, C.-H.; Tsai, C.-E.; Chen, Y.-R.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 4 | 2 | |
2009 | Effects of applied mechanical uniaxial and biaxial tensile strain on the flatband voltage of (001), (110), and (111) metal-oxide-silicon capacitors | Peng, C.-Y.; Yang, Y.-J.; Fu, Y.-C.; Huang, C.-F.; Chang, S.-T.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 12 | 10 | |
2004 | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W. | Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the | | | |
2004 | Electrical and optical reliability improvement of HfO<inf>2</inf> gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S. | Lasers and Electro-Optics, 2004. (CLEO). Conference on | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHIEH-HSIUNG KUAN | OSA Trends in Optics and Photonics Series | | | |
2004 | Electroluminescence evolution of Ge quantum-dot diodes with the fold number | Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.; CHEE-WEE LIU | OSA Trends in Optics and Photonics Series | | | |
2009 | Electroluminescence from monocrystalline silicon solar cell | Cheng, T.-H.; Kuo, P.-S.; Ko, C.-Y.; Chen, C.-Y.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 13 | 11 | |
2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | Liao, M.H.; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2006 | Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes | Liao, M.H. ; Cheng, T.-H.; Chen, T.C.; Lai, C.-H.; Lee, C.-H.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | | |
2014 | Electron ballistic current enhancement of Ge<inf>1-x</inf>Sn<inf>x</inf> FinFETs | Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU | 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | 0 | 0 | |
1996 | Electron cyclotron resonance in strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> channels on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2007 | Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime | Yang, Y.-J.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | 2 | 0 | |
2005 | Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate | Yeo, Chia Ching; Cho, Byung Jin; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W. | IEEE Electron Device Letters | | | |
2005 | Electron mobility enhancement using ultrathin pure Ge on Si substrate | Yeo, C.C.; Cho, B.J.; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 53 | 41 | |
2011 | Electron scattering in Ge metal-oxide-semiconductor field-effect transistors | Lan, H.-S.; Chen, Y.-T.; Hsu, W.; Chang, H.-C.; Lin, J.-Y.; Chang, W.-C.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 13 | 11 | |
2002 | Energy band structure of strained Si 1-xC x alloys on Si (001) substrate | Chang, S.T.; Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 16 | 14 | |