Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2014 | Fabrication and characterization of Cu(In,Ga)Se<inf>2</inf> p-channel thin film transistors | Zhu, X.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 2 | 2 | |
2014 | Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs | Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 18 | 15 | |
2008 | Fano interference in the quantum wellquantum dot system | Abramov, A.A.; Lin, C.-H.; Liu, C.W.; CHEE-WEE LIU | International Journal of Nanoscience | | | |
2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; Liu, C.W. | International Electron Devices Meeting | 9 | 0 | |
2006 | Field-emission properties of self-assembled Si-capped Ge quantum dots | Lee, S.W.; Chueh, Y.L.; Chen, H.C.; Chen, L.J.; Chen, P.S.; Chou, L.J.; Liu, C.W.; CHEE-WEE LIU | Thin Solid Films | 3 | 3 | |
2012 | First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO <inf>2</inf> interface | Chang, H.-C.; Lu, S.-C.; Chou, T.-P.; Lin, C.-M.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 15 | 14 | |
2009 | Flexible Ge-on-polyimide detectors | Ho, W.S.; Dai, Y.-H.; Deng, Y.; Lin, C.-H.; Chen, Y.-Y.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 19 | 13 | |
2010 | Flexible single-crystalline Ge p-channel thin-film transistors with schottky-barrier source/drain on polyimide substrates | Hsu, W.; Peng, C.-Y.; Lin, C.-M.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 3 | |
2005 | Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing | Liao, K.F.; Chen, P.S.; Lee, S.W.; Chen, L.J.; Liu, C.W.; CHEE-WEE LIU | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 10 | 10 | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W. | Applied Surface Science | | |  |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | Applied Surface Science | 3 | 2 | |
2005 | Formation of SiCH <inf>6</inf>-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 6 | 7 | |
2012 | Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors | Lu, T.M.; Pan, W.; Tsui, D.C.; Lee, C.-H.; Liu, C.W.; CHEE-WEE LIU | Physical Review B - Condensed Matter and Materials Physics | 16 | 19 | |
2016 | Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se<inf>2</inf> solar modules | Zhu, X.; Cheng, T.-H.; Liu, C.W.; CHEE-WEE LIU | Electronic Materials Letters | 0 | 0 | |
2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU | Applied Physics Letters | 13 | 11 | |
2014 | Gate-all-around Ge FETs | Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU | ECS Transactions | 0 | 0 | |
2014 | Ge gate-all-around FETs on Si | Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | 1 | 0 | |
2012 | Ge out diffusion effect on SiGe nanoring formation | Tu, W.-H.; Huang, S.-H.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 0 | 0 | |
2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | |  |