| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W. | International Electron Devices Meeting | 21 | | |
| 2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
| 2016 | Passivation of Al<inf>2</inf>O<inf>3</inf> / TiO<inf>2</inf> on monocrystalline Si with relatively low reflectance | Lu, C.-T.; Huang, Y.-S.; Liu, C.W.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | 3 | 2 | |
| 2006 | A PDMS mold with embedded sensory array for micromolding processes | Luo, R.C.; Lin, C.F.; Liu, C.W.; CHEE-WEE LIU | IECON Proceedings (Industrial Electronics Conference) | 0 | 0 | |
| 2007 | Performance enhancement of the nMOSFET low-noise amplifier by package strain | Hua, W.-C.; Chang, H.-L.; Wang, T.; Lin, C.-Y.; Lin, C.-P.; Lu, S.S.; Meng, C.C.; Liu, C.W.; SHEY-SHI LU ; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 1993 | Photoluminescence and electroluminescence processes in Si<inf>1-x</inf>Ge<inf>x</inf>/Si heterostructures grown by chemical vapor deposition | Sturm, J.C.; Xiao, X.; Mi, Q.; Liu, C.W.; Amour, A.St.; Matutinovic-Krstelj, Z.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Materials Science and Engineering B | 0 | 0 | |
| 2002 | Photoluminescence and electroluminescence studies on ITO/SiO2/Si tunneling diodes for efficient light emission from silicon | Chen, M.-J.; Chang, J.-F.; Tsai, C.S.; Liang, E.-Z.; Lin, C.-F.; Liu, C.W.; CHING-FUH LIN ; CHEE-WEE LIU | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
| 2002 | Photoluminescence and electroluminescence studies on ITO/SiO<inf>2</inf>/Si tunneling diodes for efficient light emission from silicon | Chen, M.-J.; Chang, J.-F.; Tsai, C.S.; Liang, E.-Z.; Lin, C.-F.; Liu, C.W.; MIIN-JANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
| 2011 | Photoluminescence characterization and passivation of CIGS absorber | Cheng, T.-H.; Hsu, W.W.; Huang, C.Y.; Lu, J.-A.; Chen, J.Y.; Liu, C.W.; CHIH-WEN LIU | ECS Transactions | 2 | 0 | |
| 1992 | Photoluminescence from electron-hole plasmas confined in Si/Si <inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells | Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; CHEE-WEE LIU | Applied Physics Letters | 52 | 54 | |
| 2011 | Physical mechanism of HfO<inf>2</inf>-based bipolar resistive random access memory | Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | 12 | 0 | |
| 2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 49 | 0 | |
| 2012 | Planar and 3D Ge FETs | Liu, C.W.; Chang, H.-C.; Lin, C.-M.; Chen, Y.-T.; CHEE-WEE LIU | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology | 0 | 0 | |
| 2008 | PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiN<inf>x</inf> stressing layer | Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chen, K.-M.; Huang, S.-Y.; Peng, C.-Y.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 26 | 24 | |
| 2001 | A PMOS Tunneling Photodetector | Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H. | IEEE Transactions on Electron Devices | | |  |
| 2008 | Polarity change of threshold voltage shifts for n-channel polycrystalline silicon thin-film transistors stressed by negative gate bias | Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | ECS Transactions | 1 | 0 | |
| 2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
| 2006 | The process and optoelectronic characterization of Ge-on-insulator | Lin, C.-H.; Yu, C.-Y.; Liao, M.H. ; Huang, C.-F.; Lee, C.-J.; Lee, C.-Y.; Liu, C.W. | ECS Transactions | 1 | 0 | |
| 2008 | Process strain induced by nickel germanide on (100) Ge substrate | Peng, C.-Y.; Yang, Y.-H.; Lin, C.-M.; Yang, Y.-J.; Huang, C.-F.; Liu, C.W.; CHEE-WEE LIU | International Conference on Solid-State and Integrated Circuits Technology, ICSICT | 3 | 0 | |
| 1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | 62 | 69 | |
