公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 6 | 6 | |
2011 | Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor | Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 2 | 0 | |
2011 | Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
2014 | Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics A: Materials Science and Processing | 11 | 13 | |