Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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1999 | The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's | Lan, H.; Lin, Y.-S.; Meng, C.-C.; Lu, S.-S. | IEEE Transactions on Electron Devices | 23 | 21 |