公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | Combinatorial method in adjoint linear systems on toric varieties | Lin, Hui-Wen; others; HUI-WEN LIN | Michigan Mathematical Journal | | | |
1990 | Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors | Hasnain, G; Tai, K; Wynn, JD; Wang, YH; Fischer, RJ; Hong, M; Wier, BE; Zydzik, GJ; Mannaerts, JP; Gamelin, J; others; MINGHWEI HONG | Electronics Letters | | | |
2012 | Correlation between oxygen vacancies and magnetism in Mn-doped Y2O3 nanocrystals investigated by defect engineering techniques | Wu, TS; Chen, YC; Shiu, YF; Peng, HJ; Chang, SL; Lee, HY; Chu, PP; Hsu, CW; Chou, LJ; Pao, CW; others; MINGHWEI HONG | Applied Physics Letters | | | |
2016 | Cross section measurement of t-channel single top quark production in pp collisions at $\\sqrts = $ 13 TeV | Sirunyan, Albert M; others; Stathes Paganis | Physics Letters B | | | |
2005 | Dalitz analysis of the three-body charmless decay B0 ---> K0(S) pi+ pi- | Abe, Kazuo; others; YEE HSIUNG | | | | |
2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG | Surface Science | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG | Device Research Conference Digest 1997 | | | |
2005 | Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan | Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG | Journal of Crystal Growth | | | |
2005 | Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Development of an integrated earthquake early warning system in Taiwan-Case for the Hualien area earthquakes | Wu, Yih-Min; Chung, Jen-Kuang; Shin, Tzay-Chyn; Hsiao, Nai-Chi; Tsai, Yi-Ben; Lee, William HK; Teng, Ta-liang; others; YIH-MIN WU | Terrestrial Atmospheric and Oceanic Sciences | | | |
2003 | Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs. | Yacoby, Y; Sowwan, M; Pindak, R; Cross, J; Walko, D; Stern, E; Pitney, J; MacHarrie, R; Hong, M; Clarke, R; others; MINGHWEI HONG | | | | |
2010 | Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | | | |
2015 | Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface | Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | | | |
1987 | Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox | Ekin, JW; Braginski, Alex; er I; Panson, AJ; Janocko, MA; Capone II, DW; Zaluzec, NJ; Fl; ermeyer, B; De Lima, OF; Hong, M; Kwo, J; others; MINGHWEI HONG | Journal of Applied Physics | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG | Journal of electronic materials | | | |