公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
2003 | GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL; Mannaerts, JP; Hong, M; Ng, KK; others; MINGHWEI HONG | Applied Physics Letters | 311 | 280 | |
2003 | GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition | Ye, PD; Wilk, GD; Kwo, J; Yang, BAYB; Gossmann, H-JL; Frei, MAFM; Chu, SNG; Mannaerts, JP; Sergent, MASM; Hong, MAHM; others; MINGHWEI HONG | Electron Device Letters, IEEE | 227 | 193 | |
2004 | GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG | Journal of electronic materials | | | |
2003 | GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition | Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG | Device Research Conference, 2003 | | | |
2000 | GaN electronics for high power, high temperature applications | Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Cho, H; Abernathy, CR; Han, J; Baca, AG; Monier, C; others; MINGHWEI HONG | Interface-Electrochemical Society | | | |
2010 | Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG | Device Research Conference 2010 | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
2005 | Growth rate effects on InGaAs/GaAs quantum dots | Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; Hong, M; others; MINGHWEI HONG | MBE-Taiwan | | | |
2011 | H 2 S molecular beam passivation of Ge (001) | Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG | Microelectronic Engineering | | | |
1988 | High T c superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; Hong, M; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others; MINGHWEI HONG | Thin Film Processing and Characterization of High-Temperature Superconductors | | | |
1988 | High T/sub c/superconducting Y-Ba-Cu-O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties | Liou, SH; Hong, M; Davidson, BA; Farrow, RC; Kwo, J; Hsieh, TC; Fleming, RM; Chen, HS; Feldman, LC; Kortan, AR; others; MINGHWEI HONG | AIP Conference Proceedings | | | |
2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | Hong, M; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others; MINGHWEI HONG | Applied Physics Letters | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |
2007 | III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? Dielectrics | Hong, Minghwei; Kwo, J Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; others; MINGHWEI HONG | Japanese journal of applied physics | | | |
2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2010 | InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric | Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | MRS Proceedings | | | |