公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2015 | ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process | M. H.Liao ; P.-G. Chen; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | |||
2015 | The demonstration of the novel nanotube Si device with the promising device performance behavior | M. H.Liao ; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | |||
2015 | The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate | M. H.Liao ; S.-C. Huangn; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures |