公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2001 | Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications | Yang, S.-C.; Chiu, H.-C.; Chan, Y.-J.; Lin, H.-H.; Kuo, J.-M.; HAO-HSIUNG LIN | IEEE Transactions on Electron Devices | |||
2002 | Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops | Chiang, M.-C.; Lu, S.-S.; Meng, C.-C.; Yu, S.-A.; Yang, S.-C.; Chan, Y.-J.; SHEY-SHI LU | IEEE Journal of Solid-State Circuits | 40 | 32 |