公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | A study of porous silicon prepared under different HF concentrations by positron annihilation | Huang, C.C.; Chang, I.M.; Huang, J.H.; JEN-CHEN FAN ; Chen, Y.F.; Tseng, P.K. | Physics Letters, Section A: General, Atomic and Solid State Physics | | | |
1998 | Correlation between photoluminescence and positron annihilation spectra in porous silicon | Haung, C.C.; Chang, I.M.; Chen, Y.F.; Tseng, P.K.; YANG-FANG CHEN | Physica B: Condensed Matter | 3 | 3 | |
1995 | Evolution of photoluminescence of porous silicon under light exposure | Chang, I.M.; Chuo, G.S.; Chang, D.C.; Chen, Y.F.; YANG-FANG CHEN | Journal of Applied Physics | 27 | 25 | |
1997 | Light emitting mechanism of porous silicon | Chang, I.M.; Chen, Y.F.; YANG-FANG CHEN | Journal of Applied Physics | 40 | 35 | |
1993 | Light-induced degradation on porous silicon | Chang, I.M.; Pan, S.C.; Chen, Y.F.; YANG-FANG CHEN | Physical Review B | 37 | 34 | |
1995 | Photoluminescence study of highly mismatched In <inf>0.53</inf> Ga <inf>0.47</inf> As epilayers grown on InP-coated GaAs substrates | Chen, Y.F.; Shen, J.L.; Chang, I.M.; Chang, S.Z.; SI-CHEN LEE ; YANG-FANG CHEN | Journal of Applied Physics | 2 | 2 | |
1994 | Raman-line-shape study of InxGa1-xAs on InP and GaAs substrates | Shen, J.L.; Chang, I.M.; Shu, Y.M.; Chen, Y.F.; Chang, S.Z.; YANG-FANG CHEN ; SI-CHEN LEE | Physical Review B | 37 | 33 | |
1996 | Study of the photoluminescence instability of porous silicon under light illumination | Chang, I.M.; Fan, J.C.; Chen, Y.F.; JEN-CHEN FAN ; YANG-FANG CHEN | Solid State Communications | 2 | 2 | |