| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | 2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features | Liao, M.H.; Yu, C.Y.; Huang, C.F.; Lin, C.H.; Lee, C.J.; Yu, M.H.; Chang, S.T.; Liang, C.Y.; Lee, C.Y.; Guo, T.H.; Chang, C.C.; Liu, C.W. | Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International | 0 | 0 |  |
| 2005 | 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features | Liao, M.H. ; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W. | International Electron Devices Meeting | 2 | | |
| 2003 | A high efficient 820 nm MOS Ge quantum dot photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 58 | 47 | |
| 2005 | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 19 | 20 | |
| 2004 | Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation | Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | Solid-State Electronics | 6 | 8 | |
| 2003 | Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate | Chang, S.T.; Liu, Y.H.; Liu, C.W.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | 3 | 0 | |
| 2005 | Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stress | Yang, I.-J.; Peng, C.-Y.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
| 2001 | Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes | Chen, M.-J.; Lin, C.-F.; Lee, M.H.; Chang, S.T.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN | Applied Physics Letters | 10 | 10 | |
| 2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | Maikap, S.; Lee, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 26 | 26 | |
| 2009 | The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics | Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | 0 | 0 | |
| 2001 | Effect of milling time on mechanical properties of Al<inf>2</inf>O<inf>3</inf>-NiAl composites | Tuan, W.H.; Chang, S.T.; Chou, W.B.; Pai, Y.P.; WEI-HSING TUAN | British Ceramic Transactions | 3 | 3 | |
| 2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | 0 | 0 | |
| 1999 | Effect of surface grinding on the strength of NiAl and Al<inf>2</inf>O<inf>3</inf>/NiAl composites | Chang, S.T.; Tuan, W.H.; You, H.C.; Lin, I.C.; WEI-HSING TUAN | Materials Chemistry and Physics | 23 | 17 | |
| 1990 | Effects of chromate preservatives treatments on the color of bamboo | Chang, S.T.; Lee, H. L.; SHANG-TZEN CHANG | Bulletin of Taiwan forestry research institute New series | | | |
| 1998 | The effects of microstructure on the mechanical properties of Al2O3-NiAl composites | Tuan, W.H.; Chou, W.B.; You, H.C.; Chang, S.T.; TuanWH | Materials Chemistry and Physics | | | |
| 1998 | The effects of microstructure on the mechanical properties of Al<inf>2</inf>O<inf>3</inf>-NiAl composites | Tuan, W.H.; Chou, W.B.; You, H.C.; Chang, S.T.; WEI-HSING TUAN | Materials Chemistry and Physics | 22 | 18 | |
| 2007 | Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime | Yang, Y.-J.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications | 2 | 0 | |
| 2002 | Energy band structure of strained Si 1-xC x alloys on Si (001) substrate | Chang, S.T.; Lin, C.Y.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 16 | 14 | |
| 2001 | Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation | Liu, C.W.; Lin, C.-H.; Lee, M.H.; Chang, S.T.; Liu, Y.-H.; Chen, M.-J.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN | Applied Physics Letters | 8 | 8 | |
| 2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU et al. | International Electron Devices Meeting | 20 | 0 | |
