| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | 1.3�gm quantum dot vertical-cavity surface-emitting laser with external light injection | Peng, P.C.; Chang, Y.H.; Kuo, H.C.; Tsai, W.K.; Lin, G.; Lin, C.T.; Yu, H.C.; Yang, H.P.; Hsiao, R.S.; Lin, K.F.; Chi, J.Y.; Chi, S.; Wang, S.C.; GONG-RU LIN | Electronics Letters | 3 | 2 | |
| 1995 | A novel method for preparing gradient index (GI) plastic rods - Initiator diffusion technique | Yang, S.Y.; Chang, Y.H.; Ho, B.C.; Chen, W.C.; Tseng, T.W.; WEN-CHANG CHEN | Polymer Bulletin | 10 | 8 | |
| 2004 | A study on the universality of the magnetic-field-induced phase transitions in the two-dimensional electron system in an AlGaAs/GaAs heterostructure | Huang, C.F.; Chang, Y.H.; Cheng, H.H.; Liang, C.-T.; CHI-TE LIANG ; YUAN-HUEI CHANG | Physica E: Low-Dimensional Systems and Nanostructures | 13 | 13 | |
| 2008 | Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> As | Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 60 | 52 | |
| 2008 | Application and validation of profile-image method for measuring deformation of tunnel wall | Wang, T.T.; Jaw, J.J.; Chang, Y.H.; TAI-TIEN WANG ; FU-SHU JENG ; JEN-JER JAW | Tunnelling and Underground Space Technology | 48 | 41 |  |
| 2011 | Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics | Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 71 | 71 | |
| 2011 | Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG | Applied Physics Letters | 26 | 23 | |
| 2010 | Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well | Lo, S.-T.; Chen, K.Y.; Su, Y.-C.; Liang, C.-T.; Chang, Y.H.; Kim, G.-H.; Wu, J.-Y.; Lin, S.-D.; CHI-TE LIANG ; YUAN-HUEI CHANG | Solid State Communications | 9 | 7 | |
| 1993 | Cyclotron-resonance-induced negative photoconductivity in GaAs AlxGa1-xAs quantum wells | Chen, Y.F.; Shen, J.L.; Chang, Y.H.; YUAN-HUEI CHANG ; YANG-FANG CHEN | Solid State Communications | 0 | 0 | |
| 2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Chang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 19 | 19 | |
| 2006 | Dynamic characteristics of long-wavelength quantum dot vertical-cavity surface-emitting lasers with light injection | Peng, P.C.; Kuo, H.C.; Tsai, W.K.; Chang, Y.H.; Lin, C.T.; Chi, S.; Wang, S.C.; Lin, G.; Yang, H.P.; Lin, K.F.; Yu, H.C.; Chi, J.Y.; GONG-RU LIN | Optics Express | 17 | 7 | |
| 2006 | Dynamic characteristics of quantum dot VCSEL with external light injection | Peng, P.C.; Kuo, H.C.; Tsai, W.K.; Chang, Y.H.; Lin, C.T.; Chi, S.; Wang, S.C.; Lin, G.; Yang, H.P.; Lin, K.F.; Yu, H.C.; GONG-RU LIN ; GONG-RU LIN | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 | 0 | 0 | |
| 2001 | Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction | Hang, D.R.; Liang, C.-T.; Huang, C.F.; Chang, Y.H.; Chen, Y.F.; Jiang, H.X.; Lin, J.Y.; CHI-TE LIANG ; YUAN-HUEI CHANG ; YANG-FANG CHEN | Applied Physics Letters | 38 | 36 | |
| 2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |
| 2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
| 2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 28 | 29 | |
| 2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 70 | |
| 2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
| 2013 | Fabrication and photoresponse of ZnO nanowires/CuO coaxial heterojunction | Wu, J.-K.; Chen, W.-J.; Chang, Y.H.; Chen, Y.F.; Hang, D.-R.; Liang, C.-T.; Lu, J.-Y.; CHI-TE LIANG ; YUAN-HUEI CHANG ; YANG-FANG CHEN | Nanoscale Research Letters | 29 | 30 | |
| 1997 | Fabrication of ZnSe quantum dots under Volmer-Weber mode by metalorganic chemical vapor deposition | Harris Liao, M.C.; Chang, Y.H.; Chen, Y.F.; Hsu, J.W.; Lin, J.M.; Chou, W.C.; YUAN-HUEI CHANG | Applied Physics Letters | 71 | | |
