| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2013 | Adsorption and sequential degradation of polybrominated diphenyl ethers with zerovalent iron | Peng, Y. H.; Chen, M. K.; Shih, Y. H.; YANG-HSIN SHIH | Journal of Hazardous Materials | 0 | 0 | |
| 1998 | Bifurcation and stability analyses of horizontal Bridgman crystal growth of a low Prandtl number material | Lan, C. W.; Chen, M. K.; Liang, M. C.; LanCW | Journal of Crystal Growth | 10 | 9 |  |
| 1993 | Effect of Supersaturation on the Interface Abruptness of AlGaAs/GaAs/AlGaAs Quantum Well Grown by Liquid Phase Epitaxy | Chen, M. K.; Chang, T. C.; 林浩雄 ; Chang, T. C.; Lin, Hao-Hsiung | Journal of Applied Physics | 3 | 5 | |
| 2005 | Effects of Silicon Doping on the Nanostructures of InGaN/GaN Quantum Wells | Chen, M. K.; Cheng, Y.C.; Chen, J. Y.; Wu, C. M.; Yang, C. C.; Ma, K. J.; Yang, J. R.; Rosenauer, A. | Journal of Crystal Growth | | |  |
| 1981 | Excess Leakage Current of a Rectifier Diode | Pai, P. L.; Hwang, C. C.; Chen, M. K.; 林浩雄 ; Chiou, Y. L.; Pai, P. L.; Hwang, C. C.; Chen, M. K.; Lin, Hao-Hsiung ; Chiou, Y. L. | 7th EDMS | | | |
| 1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
| 1991 | In0.53Ga0.47As and in0.52Al0.48As on Inp Grown by Molecular Beam Epitax | Chen, M. K.; 李嗣涔 ; 林浩雄 ; Chen, M. K.; Lee, Si-Chen ; Lin, Hao-Hsiung | The 17th EDMS | | | |
| 1991 | InAlAs/InGaAs NPN Single Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy | Huang, Chang-Hsiu; Chen, M. K.; 林浩雄 ; Huang, Chang-Hsiu; Lin, Hao-Hsiung | 17th EDMS | | | |
| 1991 | Two-Phase Liquid Phase Epitaxy of Growing in0.53Ga0.47As on Inp | Chen, M. K.; 林浩雄 ; Lin, Hao-Hsiung | 17th EDMS | | | |
| 1993 | Two-Phase Liquid Phase Epitaxy of Growing In0.53Ga0.47As on InP | Chen, M. K.; 林浩雄 ; Chen, M. K.; Lin, Hao-Hsiung | Journal of Vacuum Science & Technology. B | | | |
