公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | 1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors | Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT | Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG | Device Research Conference 2010 | | | |
2009 | Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2010 | Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing | Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG | Journal of Physics D: Applied Physics | | | |
2008 | Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8As | Chiang, TH; Lee, WC; Lin, TD; Lin, Dennis; Shiu, KH; Kwo, J; Wang, WE; Tsai, W; Hong, M; MINGHWEI HONG | IEEE International Electron Devices Meeting, 2008 | | | |
2008 | The association of membrane frizzled-related protein (MFRP) gene with acute angle-closure glaucoma – a pilot study. | WANG, IJ; LIN, S; CHIANG, TH; CHEN, ZTY; LIN, LLK; HUNG, PT; SHIH, YF | Molecular Vision | | | |
2011 | Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100) | Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chiang, TH; Chang, CS; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | $\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2009 | Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2011 | Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopy | Chiu, Ya-Ping; Shih, MC; Huang, BC; Shen, JY; Huang, ML; Lee, WC; Chang, P; Chiang, TH; Hong, M; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2012 | Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition | Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study | Pi, T-W; Lee, WC; Huang, ML; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As | Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2012 | Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2021 | High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility | Chao, WC; Chiang, TH; Liu, YC; Huang, ZX; Liao, CC; Chu, CH; Wang, CH; Tseng, HW; Hung, WY; Chou, PT; PI-TAI CHOU | COMMUNICATIONS MATERIALS | 55 | 48 | |
2011 | High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation | Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures | Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Nanotechnology | | | |
2012 | In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2010 | InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric | Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |