公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Fu, CH; MINGHWEI HONG et al. | Microelectronic Engineering | |||
2015 | Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition | Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; MINGHWEI HONG | Materials |