公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features | Liao, M.H. ; Yu, C.-Y.; Huang, C.-F.; Lin, C.-H.; Lee, C.-J.; Yu, M.-H.; Chang, S.T.; Liang, C.-Y.; Lee, C.-Y.; Guo, T.-H.; Chang, C.-C.; Liu, C.W. | International Electron Devices Meeting | 2 | | |
2006 | delta-Doped MOS Ge/Si quantum dot/well infrared photodetector | Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; CHEE-WEE LIU ; CHIEN-CHENG CHANG | Thin Solid Films | 16 | 14 | |
2006 | Electroluminescence from the Ge quantum dot MOS tunneling diodes | MING-HAN LIAO ; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; CHEE-WEE LIU | IEEE Electron Device Letters | 30 | 29 | |
2006 | δ-Doped MOS Ge/Si quantum dot/well infrared photodetector | Lin, C.-H.; Yu, C.-Y.; Kuo, P.-S.; Chang, C.-C.; Guo, T.-H.; Liu, C.W. | Thin Solid Films | | | |