公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | 1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors | Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Applied Physics Letters | | | |
1994 | 40-mW focused light spot from zone laser and parameters affecting its performance | Vakhshoori, D; Asom, M; Hong, M; Leibenguth, RE; Wynn, JD; Mannaerts, JP; Kojima, K; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
1993 | 980 nm zone lasers [InGaAs quantum wells] | Vakhshoori, D; Hong, M; Asom, M; Kojima, K; Leibenguth, RE; Wynn, JD; MINGHWEI HONG | International Electron Devices Meeting, 1993 | | | |
1993 | 980nm Zone Lasers | Vakhshoori, D; Hong, M; Asom, M; Kojima, K; MINGHWEI HONG | IEEE International Electron Devices Meeting | | | |
2000 | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG | IEEE/Cornell Conference on High Performance Devices, 2000 | 5 | | |
1997 | A Ga 2 O 3 passivation technique compatible with GaAs device processing | Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG | Solid-State Electronics | | | |
2007 | A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics | Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG | Journal of Crystal Growth | | | |
2006 | A Novel Template Approach by MBE for ALD Growth of High k Dielectrics | Lee, KY; Lee, WC; Hung, ML; Lee, YC; Chang, CH; Chiou, YK; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
1991 | A periodic index separate confinement heterostructure quantum well laser | Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG | Applied Physics Letters | | | |
1991 | A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors | Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
1987 | A Versatile new Metallo-Organic Spin-on Process for Preparing Superconducting Thin films | Gross, ME; Hong, M; Liou, S; Gallagher, PK; MINGHWEI HONG | MRS Proceedings | | | |
2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As | Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letter | | | |
2008 | Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As | Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET | Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
1999 | Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG | MRS Proceedings | | | |
2003 | Advances in high $κ$ gate dielectrics for Si and III-V semiconductors | Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG | Journal of Crystal Growth | | | |
2002 | Advances in high & kappa gate dielectrics for Si and III-V semiconductors | Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG | 2002 International Conference on Molecular Beam Epitaxy | | | |
1997 | Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions | Passlack, M; Hong, M; Schubert, EF; Zydzik, GJ; Mannaerts, JP; Hobson, WS; Harris, TD; MINGHWEI HONG | Journal of Applied Physics | | | |
1985 | Aging effects on amorphous Tb-transition-metal films prepared by diode and magnetron sputtering | Hong, M; Bacon, DD; Van Dover, RB; Gyorgy, EM; Dillon Jr, JF; Albiston, SD; MINGHWEI HONG | Journal of Applied Physics | | | |
2010 | Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing | Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG | Journal of Physics D: Applied Physics | | | |