| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2012 | 064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan | | | |
| 2003 | 4E709A, Connell Four Drive, Berkeley Heights, NJ 07922 | Epitaxy, Molecular Beam; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Crystalline oxide-silicon heterostructures and oxide optoelectronics 2002 | | | |
| 1994 | 980 nm and 850 nm zone lasers | Vakhshoori, Daryoosh; Wynn, James D; Hong, Minghwei; Asom, Moses; Kojima, Keisuke; MINGHWEI HONG | 14th IEEE International Semiconductor Laser Conference, 1994 | | | |
| 2010 | A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AI | Hong, Minghwei; MINGHWEI HONG | Lawrence Berkeley National Laboratory | | | |
| 1980 | A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al | Hong, MINGHWEI; MINGHWEI HONG | | | | |
| 2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-$κ$ Ga2O3 (Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | | | |
| 2007 | Advance in next Century nanoCMOSFET research | Hwang, Huey-Liang; Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; Hong, Minghwei; Chang-Liao, Kuei-Shu; Lu, Chun-Yuan; others; MINGHWEI HONG | Applied Surface Science | 2 | 2 | |
| 2006 | Advanced High K Dielectrics for Nano Electronics-Science and Technologies | Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | ECS Transactions | | | |
| 1992 | Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence | Chen, Young-Kai; Hong, Minghwei; Wu, Ming-Chiang; MINGHWEI HONG | | | | |
| 1998 | Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article | Hong, Minghwei; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; Passlack, Matthias; Ren, Fan; Zydzik, George John; MINGHWEI HONG | | | | |
| 2002 | Article comprising an oxide layer on a GaAs or GaN-based semiconductor body | Hong, Minghwei; Kortan, Ahmet Refik; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; MINGHWEI HONG | | | | |
| 1999 | Article comprising an oxide layer on a GaAs-based semiconductor body | Hong, Minghwei; Kwo, Jueinai Raynien; Murphy, Donald Winslow; MINGHWEI HONG | | | | |
| 1999 | Article comprising an oxide layer on GAN | Hobson, William Scott; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG | | | | |
| 2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission study | Pi, Tun-Wen; Lin, Hsiao-Yu; Liu, Ya-Ting; Lin, Tsung-Da; Wertheim, Gunther K; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG | Nanoscale research letters | | | |
| 2010 | $\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfaces | Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Kwo, J Raynien; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
| 2006 | Cubic HfO2 Doped with Y2O3 for Advanced Gate Dielectrics by MBE. | Yang, ZhiKai; Lee, WC; Chang, Pen; Huang, MoLin; Huang, Yi Lin; Hong, Minghwei; Huang, CM; Hsu, CH; Kwo, Raynien; MINGHWEI HONG | APS Meeting Abstracts | | | |
| 2003 | Direct Determination of the Stacking Order in Gd̃ 2Õ 3 Epi-Layers on GaAs | Yacoby, Yizhak; Sowwan, Mukhles; Pindak, Ron; Cross, Julie; Walko, Don; Stern, Ed; Pitney, John; MacHarrie, Robert; Hong, Minghwei; Clarke, Roy; MINGHWEI HONG | Materials Research Society | | | |
| 2007 | Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications | Chiou, Yan-Kai; Chang, Che-Hao; Wang, Chen-Chan; Lee, Kun-Yu; Wu, Tai-Bor; Kwo, Raynien; Hong, Minghwei; MINGHWEI HONG | Journal of the Electrochemical Society | | | |
| 1995 | Enhancement in excitonic absorption for GaAs/AlGaAs multiple-quantum-well structures under external anisotropic strain | Huang, Man-Fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
| 1995 | Erratum:‘‘Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structure under external anisotropic strain’’[Appl. Phys. Lett. 66, 736 (1995)] | Huang, Man-fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Applied Physics Letters | | | |
