公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry | Darakchieva, V.; Schubert, M.; Hofmann, T.; Monemar, B.; Hsiao, C.-L.; Liu, T.-W.; Chen, L.-C. ; Schaff, W.J.; Takagi, Y.; Nanishi, Y. | Applied Physics Letters | 26 | 24 | |
2012 | Growth of sparse arrays of narrow GaN nanorods hosting spectrally stable InGaN quantum disks | Chen, Y.-T.; Tsai, W.-C.; Chen, W.-Y.; Hsiao, C.-L.; Hsu, H.-C.; Chang, W.-H.; Hsu, T.-M.; Chen, K.-H.; Chen, L.-C. | Optics Express | 11 | 10 | |
2010 | Growth orientation dependent hardness for epitaxial wurtzite InN Films | Kataria, S.; Liu, T.-W.; Hsiao, C.-L.; Dhara, S.; Chen, L.-C. ; Chen, K.-H.; Dash, S.; Tyagi, A.K. | Journal of Nanoscience and Nanotechnology | 6 | 6 | |
2010 | m-plane (101̱0) InN heteroepitaxied on (100)-γ-LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy | Hsiao, C.-L.; Chen, J.-T.; Hsu, H.-C.; Liao, Y.-C.; Tseng, P.-H.; Chen, Y.-T.; Feng, Z.C.; Tu, L.-W.; Chou, M.M.C.; Chen, L.-C. ; LI-CHYONG CHEN | Journal of Applied Physics | 11 | 10 | |
2007 | Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy | Hsiao, C.-L.; Tu, L.-W.; Chi, T.-W.; Chen, M.; Young, T.-F.; Chia, C.-T.; Chang, Y.-M. | Applied Physics Letters | 58 | 55 | |
2016 | Out-of-plane spin polarization of edge currents in Chern insulator with Rashba spin-orbit interaction | Chen, T.-W.; Hsiao, C.-L.; CHONG-DER HU | Journal of Physics Condensed Matter | 0 | 0 | |
2006 | Photo-assisted local oxidation of GaN using an atomic force microscope | Hwang, J.S.; Hu, Z.S.; Lu, T.Y.; Chen, L.W.; Chen, S.W.; Lin, T.Y.; Hsiao, C.-L.; Chen, K.-H.; Chen, L.-C. | Nanotechnology | 17 | 17 | |
2012 | Room-temperature heteroepitaxy of single-phase Al1-xIn xN films with full composition range on isostructural wurtzite templates | Hsiao, C.-L.; Palisaitis, J.; Junaid, M.; Persson, P.O.Å.; Jensen, J.; Zhao, Q.-X.; Hultman, L.; Chen, L.-C. ; Chen, K.-H.; Birch, J. | Thin Solid Films | 22 | 22 | |
2011 | Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al 2O 3 (0001) by high power impulse magnetron sputtering | Junaid, M.; Lundin, D.; Palisaitis, J.; Hsiao, C.-L.; Darakchieva, V.; Jensen, J.; Persson, P.O.Å.; Sandström, P.; Lai, W.-J.; Chen, L.-C. ; Chen, K.-H.; Helmersson, U.; Hultman, L.; Birch, J. | Journal of Applied Physics | 16 | 16 | |
2008 | Unravelling the free electron behavior in InN | Darakchieva, V.; Hofmann, T.; Schubert, M.; Sernelius, B.E.; Giuliani, F.; Xie, M.-Y.; Persson, P.O.Å.; Monemar, B.; Schaff, W.J.; Hsiao, C.-L.; Chen, L.-C. ; Nanishi, Y. | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 0 | 0 | |