| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1992 | A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits | Chen, C.-C.; Liu, S.-C.; Hsiao, C.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Nuclear Science | 15 | 12 | |
| 2001 | An on-chip temperature sensor by utilizing a MOS tunneling diode | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 32 | 27 | |
| 2001 | Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress | Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 4 | 4 | |
| 2001 | Application of anodization to reoxidize silicon nitride film | Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
| 1996 | Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics | Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Applied Surface Science | 0 | 0 | |
| 2011 | Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides | Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
| 1993 | Aspect ratio design consideration for radiation-hard CMOS inverters | Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation | 0 | 0 | |
| 2001 | Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injection | Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 3 | 3 | |
| 2009 | Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 9 | 9 | |
| 2009 | Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 1 | 0 | |
| 2010 | Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 9 | 8 | |
| 2009 | Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE International Reliability Physics Symposium | 1 | 0 | |
| 2006 | Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously | Wang, T.-M.; Chang, C.-H.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
| 2011 | Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 12 | 12 | |
| 2011 | Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides | Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 15 | 13 | |
| 2009 | Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides | Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 36 | 34 | |
| 1989 | Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices | Hwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 0 | 0 | |
| 2014 | Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | Thin Solid Films | 1 | 1 | |
| 2014 | Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | Solid-State Electronics | 4 | 4 | |
| 2020 | Coupling sensitivity in concentric metal-insulator-semiconductor tunnel diodes by controlling the lateral injection electrons | Chen, K.-C.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 1 | 1 | |
