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J. M. Lin
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2006
A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
J. M. Lin; L. C. Chou; HAO-HSIUNG LIN
OPT2006
2011
Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells
J. M. Lin; L. C. Chou; HAO-HSIUNG LIN
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
5
2009
Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures
P. Sitarek; H. P. Hsu; Y. S. Huang; J. M. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN
Journal of Applied Physics.
8
2009
The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells
J. M. Lin; L. C. Chou; HAO-HSIUNG LIN
International electron devices and materials symposia
2010
The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
J. M. Lin; L. C. Chou; HAO-HSIUNG LIN
22nd International Conference on Indium Phosphide and Related Materials (IPRM)