| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2012 | A compact analytic model of the strain field induced by through silicon vias | Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 17 | 16 | |
| 2015 | Asymmetric keep-out zone of through-silicon via using 28-nm technology node | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 2 | |
| 2011 | Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers | Lan, H.-S.; Chan, S.-T.; Cheng, T.-H.; Chen, C.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 22 | 20 | |
| 2007 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H.; Liao, M.H.; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU ; Liao, M.H. | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
| 2008 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H.; Hung, T.-A.; Kuo, P.-S.; Liao, M.H.; Deng, Y.; CHEE-WEE LIU ; Cheng, T.-H. ; Liao, M.H. | IEEE Transactions on Electron Devices | 3 | 3 | |
| 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, Kao-Feng; Liu, C. W. | Applied Physics Letters | | |  |
| 2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 12 | 11 | |
| 2016 | Compact modeling and simulation of TSV with experimental verification | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Liu, C.W.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | 1 | 0 | |
| 2012 | Direct and indirect radiative recombination from Ge | Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; Jan, S.-R.; Chen, C.-Y.; Chan, S.T.; Nien, Y.-H.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Thin Solid Films | 4 | 4 | |
| 2010 | Extrinsic effects of indirect radiative transition of Ge | Jan, S.-R.; Lee, C.-H.; Cheng, T.-H.; Chen, Y.-Y.; Peng, K.-L.; Chan, S.-T.; Liu, C.W.; Yuji, Y.; Bernd, T.; CHEE-WEE LIU | ECS Transactions | 1 | 0 | |
| 2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 6 | 0 | |
| 2011 | Influence of defects and interface on radiative transition of Ge | Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | 17 | 18 | |
| 2004 | Mechanically strained Si-SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
| 2004 | Mechanically strained Si/SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. | IEEE Electron Device Letters | | | |
| 2004 | Mechanically strained strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. | IEEE Electron Device Letters | | | |
| 2004 | Mechanically Strained Strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 24 | 21 | |
| 2013 | Modeling and optimization of edge dislocation stressors | Tsai, M.-H.; Jan, S.-R.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 3 | |
| 2016 | Modeling and simulation of TSV induced keep-out zone using silicon data | Liu, C.W.; Yan, J.-Y.; Jan, S.-R.; CHEE-WEE LIU | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | 0 | 0 | |
| 2015 | Reply to 'comment on 'A compact analytic model of the strain field induced by through ilicon vias'' | Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 0 | 0 | |
| 2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M. H.; Kuo, P.-S.; Jan, S.-R.; Chang, S. T.; Liu, C. W. | Applied Physics Letters | | | |
