公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2017 | Ferroelectric Al:HfO2 Negative Capacitance FETs | M. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu | International Electron Devices Meeting | |||
2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | |||
2016 | Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs | M. H. Lee; S.-T. Fan; C.-H. Tang; P.-G. Chen; Y.-C. Chou; H.-H. Chen; J.-Y. Kuo; M.-J. Xie; S.-N. Liu; M.-H. Liao; C.-A. Jong; K.-S. Li; M.-C. Chen; C. W. Liu; LIN-SHAN LEE | International Electron Devices Meeting (IEDM) | |||
2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF | M. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen | IEEE Electron Device Meeting |