公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2019 | Ferro-electric HfZrO2 FETs for steep switch onset | K.-T. Chen; MING-HAN LIAO | Microelectronic Engineering | |||
2017 | Ferroelectric Al:HfO2 Negative Capacitance FETs | M. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu | International Electron Devices Meeting | |||
2018 | Ferroelectric HfZrOx FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) | K.-T. Chen; MING-HAN LIAO | IEEE Journal of the Electron Devices Society | |||
2019 | Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications | K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO | IEEE Electron Device Letters | |||
2018 | Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles | M. H.Liao ; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu; Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee | 2018 International Conference on Solid State Devices and Materials |