公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG | MRS Proceedings | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG | Solid-State Electronics | | | |
1997 | DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION | Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; MINGHWEI HONG | Electrochemical Society ( ECS ) Proceedings | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG | Device Research Conference Digest 1997 | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Yi Chun; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
1998 | Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide | Hong, M; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1996 | Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates | Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG | International Electron Devices Meeting, 1996 | | | |
1999 | Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG | Electronics Letters | | | |
1998 | Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | Electron Device Letters, IEEE | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
1997 | III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric | Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG | 19th Annual Gallium Arsenide Integrated Circuit Symposium, 1997 | | | |