| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2008 | 1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors | Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Applied Physics Letters | | | |
| 2000 | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG | IEEE/Cornell Conference on High Performance Devices, 2000 | | | |
| 2006 | A Novel Template Approach by MBE for ALD Growth of High k Dielectrics | Lee, KY; Lee, WC; Hung, ML; Lee, YC; Chang, CH; Chiou, YK; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
| 1991 | A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors | Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
| 2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As | Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letter | | | |
| 2008 | Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As | Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
| 2010 | Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT | Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG | Device Research Conference 2010 | | | |
| 2009 | Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG | Device Research Conference, 2009 | | | |
| 2011 | Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET | Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
| 1999 | Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate Oxide | Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG | MRS Proceedings | | | |
| 2003 | Advances in high $κ$ gate dielectrics for Si and III-V semiconductors | Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG | Journal of Crystal Growth | | | |
| 2002 | Advances in high & kappa gate dielectrics for Si and III-V semiconductors | Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG | 2002 International Conference on Molecular Beam Epitaxy | | | |
| 2010 | Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing | Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG | Journal of Physics D: Applied Physics | | | |
| 2008 | Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8As | Chiang, TH; Lee, WC; Lin, TD; Lin, Dennis; Shiu, KH; Kwo, J; Wang, WE; Tsai, W; Hong, M; MINGHWEI HONG | IEEE International Electron Devices Meeting, 2008 | | | |
| 2011 | Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics | Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
| 2008 | Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters | Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG | Applied Physics Letters | | | |
| 2011 | Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy | Chiu, Ya-Ping; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, M-H; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
| 2011 | Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100) | Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chiang, TH; Chang, CS; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
| 2012 | $\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
| 2012 | $\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
