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  1. NTU Scholars
  2. Research Outputs

Browsing by Author Kwo, J


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Showing results 1 to 20 of 321  next >
Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
20081 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitorsShiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG Applied Physics Letters 
2000A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETsGila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG IEEE/Cornell Conference on High Performance Devices, 2000
2006A Novel Template Approach by MBE for ALD Growth of High k DielectricsLee, KY; Lee, WC; Hung, ML; Lee, YC; Chang, CH; Chiou, YK; Hong, M; Kwo, J; MINGHWEI HONG APS Meeting Abstracts 
1991A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectorsHong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG Journal of Crystal Growth 
2008Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 AsLee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG Applied Physics Letter 
2008Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 AsChiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG Applied Physics Letters
2010Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOTChu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG Device Research Conference 2010 
2009Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 AsLin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG Device Research Conference, 2009
2011Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFETLin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG Journal of Crystal Growth 
1999Advances in GaAs Mosfet's Using Ga 2 O 3 (Gd 2 O 3) as Gate OxideWang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Weiner, JS; Chen, YK; Cho, AY; MINGHWEI HONG MRS Proceedings 
2003Advances in high $κ$ gate dielectrics for Si and III-V semiconductorsKwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG Journal of Crystal Growth 
2002Advances in high & kappa gate dielectrics for Si and III-V semiconductorsKwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG 2002 International Conference on Molecular Beam Epitaxy
2010Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealingLee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG Journal of Physics D: Applied Physics 
2008Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8AsChiang, TH; Lee, WC; Lin, TD; Lin, Dennis; Shiu, KH; Kwo, J; Wang, WE; Tsai, W; Hong, M; MINGHWEI HONG IEEE International Electron Devices Meeting, 2008
2011Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristicsChang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG Microelectronic Engineering 
2008Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parametersChang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG Applied Physics Letters
2011Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopyChiu, Ya-Ping; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, M-H; Hong, M; Kwo, J; MINGHWEI HONG Applied Physics Letters 
2011Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100)Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chiang, TH; Chang, CS; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG APS Meeting Abstracts 
2012$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ AsLee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG Bulletin of the American Physical Society 
2012$\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfacesHuang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG Bulletin of the American Physical Society 
Showing results 1 to 20 of 321  next >

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

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開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

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