公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1987 | Antiphase domain boundaries in the superconducting phase of the Y-Ba-Cu-O system | Chen, CH; Werder, DJ; Liou, Sy\\_Hwang; Kwo, JR; Hong, M; MINGHWEI HONG | Physical Review B | | | |
2009 | Enhancement Mode InGaAs MOSFETs | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | Meeting Abstracts | | | |
1996 | GaAs surface passivation using in-situ oxide deposition | Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG | Applied Surface Science | 19 | 18 | |
1995 | In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity | Passlack, M; Hong, M; Schubert, EF; Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | ECS Transactions | | | |
1997 | Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling | Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG | IEEE Transactions on Electron Devices | | | |
1988 | Preparation Of High Tc And Jc Films Of Ba2YCu3O7_8 By Laser Evaporation And Observation Of Superconductivity In A 27Å Phase | M; ich, ML; DeSantolo, AM; Fleming, RM; Marsh, P; Martinez-Mir; a, L; Nakahara, S; Sunshine, S; Kwo, JR; Hong, M; Boone, T; others; MINGHWEI HONG | 1988 Semiconductor Symposium | | | |
2014 | Pushing the Material Limits in High Kappa Dielectrics on High Carrier Mobility Semiconductors for Science/Technology Beyond Si CMOS and More | Hong, Minghwei; Kwo, JR; MINGHWEI HONG | | | | |
1996 | Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy | Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG | Applied Physics Letters | 60 | 63 | |