公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | The characteristic of HfO2 on strained SiGe | Chen, T.C.; Lee, L.S.; Lai, W.Z.; Liu, C.W. | Materials Science in Semiconductor Processing | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | CHEE-WEE LIU ; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2005 | The characteristic of HfO2 on strained SiGe | CHEE-WEE LIU ; Chen, T.C.; Lee, L.S.; Lai, W.Z.; CHEE-WEE LIU | Materials Science in Semiconductor Processing | | | |