Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2001 | A comprehensive study of inversion current in MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2001 | A novel illuminator design in a rapid thermal processor | CHEE-WEE LIU ; Lee, M.H.; CHEE-WEE LIU | IEEE Transactions on Semiconductor Manufacturing | | | |
2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H. | Electrochemical Society | 5 | | |
2004 | BICMOS devices under mechanical strain | CHEE-WEE LIU ; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU | Proceedings of the Electrochemical Society | | | |
2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | CHEE-WEE LIU ; Maikap, S.; Lee, M.H.; Chang, S.T.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2001 | A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes | Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W. | IEEE Transactions on Electron Devices | | | |
2014 | Concomitant charge-density-wave and unit-cell-doubling structural transitions in Dy5Ir4Si10 | Lee, M.H.; Chen, C.H.; Tseng, C.M.; Lue, C.S.; Kuo, Y.K.; Yang, H.D.; Chu, M.-W. | Physical Review B - Condensed Matter and Materials Physics | 6 | 7 | |
2001 | Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Lee, M.H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2009 | The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics | Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | | | |
1998 | The design of rapid thermal process for large diameter applications [semiconductor wafer processing] | Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU ; CHIH-CHUNG YANG | Semiconductor Manufacturing Technology Workshop | 0 | 0 | |
2004 | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W. | Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the | | | |
2004 | Electrical and optical reliability improvement of HfO<inf>2</inf> gate dielectric by deuterium and hydrogen incorporation | CHEE-WEE LIU ; Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2005 | Electron mobility enhancement using ultrathin pure Ge on Si substrate | CHEE-WEE LIU ; Yeo, C.C.; Cho, B.J.; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2005 | Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate | Yeo, Chia Ching; Cho, Byung Jin; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W. | IEEE Electron Device Letters | | | |
2011 | Electronically phase-separated charge-density waves in Lu 2Ir3Si5 | Lee, M.H.; Chen, C.H.; Chu, M.-W. ; Lue, C.S.; Kuo, Y.K. | Physical Review B - Condensed Matter and Materials Physics | 24 | 21 | |
2004 | Evidence of SiSiGe heterojunction roughness scattering | CHEE-WEE LIU ; Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU | Applied Physics Letters | | | |
2019 | Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs | CHEE-WEE LIU ; Lee, M.H.; Liu, C.W.. | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
2018 | Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation Applications | Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S. | 2018 IEEE Electron Devices Technology and Manufacturing Conference | 2 | 0 | |
2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | | | |