公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Metalorganic chemical vapor deposition and structural/optical characteristics of InGaN/GaN multiple quantum wells grown on sapphire for light emitting diode application | Feng, Z.C.; Chen, J.-H.; Tsai, H.-L.; Yang, J.-R.; Li, A.G.; JER-REN YANG | Proceedings of SPIE - The International Society for Optical Engineering | | | |
2007 | Optical and structural characteristics of high-performance InGaN/GaN multiple quantum well light-emitting diodes: H effects of nano-structural features | Lee, Z.S.; Feng, Z.C.; Tsai, H.; Yang, J.; Li, A.G.; Chen, L.C. ; Chen, K.H.; Chen, Y.F.; Ferguson, I.T.; JER-REN YANG ; YANG-FANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
2006 | Optical spectroscopic investigation of InGaN/GaN multiple quantum well light emitting diode wafers grown on sapphire by metalorganic chemical vapor deposition | Feng, Z.C.; Chen, J.-H.; Li, A.G.; Chen, L.C. | Journal of Physics: Conference Series | 0 | 0 | |
2007 | Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition | Lee, Z.S.; Feng, Z.C.; Li, A.G.; Tsai, H.L.; Yang, J.R.; Chen, Y.F.; Li, N.; Ferguson, I.T.; JER-REN YANG ; YANG-FANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 1 | 0 | |
2008 | Structural and optical properties of ingan/gan multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition | Feng, Z.C.; Yang, J.-R.; Li, A.G.; Ferguson, I.T.; JER-REN YANG | III- Nitride Devices and Nanoengineering | | | |