| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2008 | Erratum to “Variation of initial 230Th/232Th and limits of high precision U-Th dating of shallow-water corals”. | Shen, C.-C.; Li, K.-S.; Sieh, K.; Natawidjaja, D.; Cheng, H.; Wang, X.; Edwards, R. L.; Lam, D. D.; Hsieh, Y.-T.; Fan, T.-Y.; Meltzner, A. J.; Taylor, F. W.; Quinn, T. M.; Chiang, H.-W.; Kilbourne, K. H. | Geochim. Cosmochim. Acta | | | |
| 2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
| 2018 | Ferroelectric Characteristics of Ultra-thin Hf <inf>1-x</inf> Zr <inf>x</inf> O <inf>2</inf> Gate Stack and 1T Memory Operation Applications | Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H. ; Li, K.-S. | 2018 IEEE Electron Devices Technology and Manufacturing Conference | 2 | 0 | |
| 2019 | Ferroelectric HfZrO<inf>2</inf> FETs for steep switch onset | Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | Microelectronic Engineering | 6 | 6 | |
| 2019 | Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications | Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO | IEEE Electron Device Letters | 65 | 68 | |
| 2017 | Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs | Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H. ; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W. | International Electron Devices Meeting | 90 | 0 | |
| 2015 | Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS<inf>for</inf>=42mV/dec, SS<inf>rev</inf>=28mV/dec, switch-off <0.2V, and hysteresis-free strategies | Lee, M.H.; Chen, P.-G.; Liu, C.; Chu, K.-Y.; Cheng, C.-C.; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, S.-J.; Liao, M.-H. ; Tang, M.; Li, K.-S.; Chen, M.-C. | International Electron Devices Meeting | 82 | 0 | |
| 2018 | Suppression of short channel effects in FinFETs using crystalline ZrO<inf>2</inf> high-K/Al<inf>2</inf>O<inf>3</inf> buffer layer gate stack for low power device applications | Tsai, M.-C.; Wang, C.-I.; Chen, Y.-C.; Chen, Y.-J.; Li, K.-S.; Chen, M.-C.; Chen, M.-J.; MIIN-JANG CHEN | Semiconductor Science and Technology | 6 | 5 | |
| 2016 | Tunneling issues regarding the rock tunnel-shaft intersection in Taiwan | Wang, T.-T.; Lee, T.-T.; Lee, S.-M.; Li, K.-S.; Chen, C.-H.; TAI-TIEN WANG | Geotechnical Engineering | | | |
