| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2017 | The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect | Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO | Vacuum | 0 | 0 | |
| 2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Liao, M.-H.; Lien, C.; MING-HAN LIAO | AIP Advances | 7 | 6 | |
| 2020 | The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs | Lu, P. Y.; Yen, C. M.; Chang, S. Y.; Feng, Y. J.; Lien, C.; Hu, C. W.; Yao, C. W.; Lee, M. H.; Liao, M. H. | Technical Digest - International Electron Devices Meeting, IEDM | 2 | 0 | |
| 2014 | The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C. | Symposium on VLSI Technology | 4 | 0 | |
| 2014 | The demonstration of D-SMT stressor on Si and Ge n-FinFETs | Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. | Symposium on VLSI Technology | 6 | 0 | |
| 2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 7 | 7 | |
| 2020 | The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors | Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2018 | Thickness dependence of electrical conductivity and thermo-electric power of Bi<inf>2.0</inf>Te<inf>2.7</inf>Se<inf>0.3</inf>/Bi<inf>0.4</inf>Te<inf>3.0</inf>Sb<inf>1.6</inf> thermo-electric devices | Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO | AIP Advances | 8 | 8 | |
