公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission study | Pi, Tun-Wen; Lin, Hsiao-Yu; Liu, Ya-Ting; Lin, Tsung-Da; Wertheim, Gunther K; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG | Nanoscale research letters | | | |
2010 | $\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfaces | Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Kwo, J Raynien; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2010 | In-situ XPS, STM and STS analyses of high k oxide/III-V interfaces | Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Raynien Kwo, J; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG | APS Meeting Abstracts | | | |
2007 | MBE grown high $κ$ dielectrics Ga 2 O 3 (Gd 2 O 3) on GaN | Chang, Yao-Chung; Lee, YJ; Chiu, YN; Lin, Tsung-Da; Wu, SY; Chiu, Han-Chin; Kwo, J; Wang, Yeong-Her; Hong, Minghwei; MINGHWEI HONG | Journal of Crystal Growth | | | |
2014 | Method and system for manufacturing semiconductor device | Hong, Ming-Hwei; Kwo, Ray-Nien; Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Hsing; Chang, Pen; Lin, Chun-An; Lin, Tsung-Da; MINGHWEI HONG | | | | |
2007 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, Chih-Ping; Lin, Tsung-Da; Chang, Yao-Chung; Hong, Mingwhei; Kwo, J Raynien; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | | | |
2011 | Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Applied Physics Express | | | |
2013 | Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study | Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen; others; MINGHWEI HONG | Applied Physics Express | | | |