公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser | Lin, Hao-Hsiung ; Liu, Po-Wei; Chen, Jhe-Ren | Optoelectronics | 0 | 0 | |
2002 | Growth and characterization of low-threshold 1.3μm GaAsSb quantum well laser | Liu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung | The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society | | | |
2002 | Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy | Liu, Po-Wei; Lee, Ming-Han; Lin, Hao-Hsiung ; Chen, Jhe-Ren | Electronics Letters | 17 | 16 | |
2007 | Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy | Cripps, S. A.; Hosea, T. J. C.; Krier, A.; Smirnov, V.; Batty, P. J.; Zhuang, Q. D.; Lin, H. H.; Liu, Po-Wei; Tsai, G. | Applied Physics Letters | | | |
2004 | 以固態源分子束磊晶法成長含銻化合物半導體材料與元件 | 劉珀瑋; Liu, Po-Wei | | | | |